A Non Linear Fit Based Method to Separate Extraction of Series Resistance and Mobility Attenuation Parameter in Ultra-thin Oxide Mosfet
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چکیده
We present in this work a new procedure to separate extraction of the series resistance and the mobility degradation factor in ultra thin MOSFETs. The method is based on the manipulation of the exponential model of effective mobility and extraction different parameters using a non linear fit of the experimental characteristic Id (Vg) measured in strong inversion at small drain bias. The results obtained have shown better agreement with measurements data
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تاریخ انتشار 2015